High-frequency Figures-of-merit of Carbon Nanotube Field-effect Transistors

The DC characteristics of CNFETs are reasonably well understood, although optimization of devices is still being actively pursued, notwithstanding difficulties in large-scale fabrication. Although the subject of promising experiments [2,3], the frequency-dependent performance has yet to be studied thoroughly in theory, and this work takes a step in that direction. We seek to describe a small-signal method and give preliminary estimates of valuable figures-ofmerit in transistor design, the unity current-gain and unity power-gain frequencies (fT and fmax).